Compound Semiconductor Chips

SiC power semiconductor products. We can produce 60,000 pieces of 6-inch SiC MOSFET or SBD epitaxy and wafers, 6.4 million power modules, and 18 million power single tubes annually.

Intelligent digital signal processing series chip, RF multifunction chip, High-performance RF frequency synthesizer series chips

RF series products, power series products, and high-end heat dissipation materials, and provides high-power packaging and testing services.

Millimeter-wave radar chips and micro-systems product,

GaN/GaAs Power Amplifier chip, GaN HEMT Die, Amplitude and Phase Control Multifunctional Chip, Phase Shifter chip, Attenuators, LNA, Mixer.

Silicon Carbide MOSFET wafer, discrete module manufacturer. Products widely used in EV, EV Charger, renewable energy system in China market including BYD.

SiC/SiC Epitaxy Wafer Service on 6”, as well GaN/Si on 6" and 8"

RF High Reliability Space Products, Test Engineering Development services, Test, package assembly, device qualification, and product reliability testing, tape and reel services. Gain Blocks, GaN Power Amplifiers, MCMs And Hybrids.

SiC Substrates N-type, SiC Substrates SI-type, SiC Epitaxy Wafer, GaN Epitaxy on SiC, GaN Epitaxy on Si, SiC Puck (Polytype 4H), Moissanite Rough Stone

RF MMIC products and foundry services for specialised markets, including Defence and Space, telecommmunications, automotive radar and industrial sensors.

IC design and foundry. III-V materials (GaN, AlN, InAlN, AlGaN), epitaxial wafers (up to 6um in thickness on 8-inch Silicon wafer), high-voltage power switching (650V HEMTs and SBDs) and RF amplifier devices (sub-6GHz and mmWave).

GaN Power Amplifier MMIC Dice. GaN foundry and MPW services.

Fabri Perot laser diode chips, DFB chips, APD and PIN photodiode chips

Supplier of epitaxy, foundry services and MMICs based around the most advanced III-V processes, in particular in GaN and GaAs semiconductor technologies.

development and manufacturing of ‘GaN based compound semiconductor and application module’ which is a core technology for future surveillance weapon system and 5G communications.

Producer of power semiconductors based on gallium arsenide GaAs.

R&D, production and marketing of full-color, ultrahigh-brightness LED epitaxial wafers, chips, III-V compound semiconductors, microwave communication IC and power devices and optical communication components.