Jiangsu CorEnergy Semiconductor Co Ltd.
, CN Manufacturer
IC design and foundry. III-V materials (GaN, AlN, InAlN, AlGaN), epitaxial wafers (up to 6um in thickness on 8-inch Silicon wafer), high-voltage power switching (650V HEMTs and SBDs) and RF amplifier devices (sub-6GHz and mmWave).