GaN HEMT Chips

RF series products, power series products, and high-end heat dissipation materials, and provides high-power packaging and testing services.

GaN/GaAs Power Amplifier chip, GaN HEMT Die, Amplitude and Phase Control Multifunctional Chip, Phase Shifter chip, Attenuators, LNA, Mixer.

SiC/SiC Epitaxy Wafer Service on 6”, as well GaN/Si on 6" and 8"

IC design and foundry. III-V materials (GaN, AlN, InAlN, AlGaN), epitaxial wafers (up to 6um in thickness on 8-inch Silicon wafer), high-voltage power switching (650V HEMTs and SBDs) and RF amplifier devices (sub-6GHz and mmWave).

development and manufacturing of ‘GaN based compound semiconductor and application module’ which is a core technology for future surveillance weapon system and 5G communications.

R&D, production and marketing of full-color, ultrahigh-brightness LED epitaxial wafers, chips, III-V compound semiconductors, microwave communication IC and power devices and optical communication components.