Bi2Se3 (Bismuth Selenide) Substrate
Bismuth Selenide (Bi2Se3) is a material that is used as a substrate in the field of electronics and materials science. It is a crystalline compound with a layered structure and has properties such as a large energy bandgap, high carrier mobility, and strong spin-orbit coupling. These properties make Bi2Se3 an attractive material for various applications, including thermoelectric energy conversion, topological insulators, and spintronics.
Bi2Se3 substrates are often used as a substrate material for growing high-quality thin films of other materials. The large energy bandgap and high mobility of the material make it suitable for use in high-performance electronics such as infrared detectors and solar cells. The strong spin-orbit coupling of Bi2Se3 also makes it an attractive material for spintronic devices, which exploit the spin of electrons for information processing.
The production of Bi2Se3 substrates is typically performed by the chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) method. The resulting substrates have a high degree of crystalline perfection, which is important for high-quality thin film growth.