PbSe (Lead selenide) Substrates
PbSe (Lead selenide) is a direct bandgap semiconductor material, often used as a substrate for infrared and optoelectronic applications. It is typically grown as a single crystal using methods such as Bridgman-Stockbarger, Vertical Gradient Freeze (VGF), or solution growth.
PbSe is highly thermally stable and can operate at high temperatures, making it useful for applications in high-temperature environments. It is also highly conductive, making it suitable for use as a substrate for photodetectors and other optoelectronic devices.
However, the lead content in PbSe makes it toxic and subject to regulations, which can limit its use in some applications. Additionally, the high cost of producing high-quality PbSe single crystals can also be a factor in its adoption.
Despite these challenges, PbSe continues to be a popular substrate material for a variety of infrared and optoelectronic applications, including long-wave infrared detectors, infrared imaging systems, and thermophotovoltaic cells.