GaAs (Gallium Arsenide) on Al2O3 (Aluminum Oxide) bonded wafers are engineered substrates used in the production of various electronic and optoelectronic devices. GaAs is a III-V compound semiconductor material that is well-known for its high electron mobility and high frequency operation, making it a popular choice for applications in high-speed electronics and optoelectronics.
The use of Al2O3 as a substrate allows for a low thermal expansion coefficient, which provides improved thermal stability, making the GaAs on Al2O3 bonded wafers suitable for high-temperature and high-power applications. Additionally, the bond between GaAs and Al2O3 provides a strong mechanical and thermal connection, which enhances the stability of the wafer.
These wafers are commonly used in the production of high-speed transistors, high-power laser diodes, and other optoelectronic devices. They are also used in the manufacture of high-speed and high-frequency circuits, such as microwave amplifiers, modulators, and frequency multipliers.