LiTaO3 on AlN bonded wafers are composite substrates that consist of a thin layer of Lithium Tantalate (LiTaO3) bonded to a substrate made of Aluminum Nitride (AlN). The LiTaO3 layer is used as a piezoelectric material for applications such as surface acoustic wave (SAW) filters, resonators, and other acoustic wave devices, while the AlN substrate provides good thermal conductivity and mechanical stability. The bonding of the LiTaO3 layer to the AlN substrate is achieved through a wafer bonding process that involves the use of high temperature and pressure to create a strong and reliable bond between the two materials. These composite substrates are commonly used in the manufacturing of RF and microwave devices, as well as in the development of new technologies for wireless communication, sensors, and other electronic systems.