LN/Si Bonded Wafers refer to a type of engineered substrate where a thin layer of Lithium Niobate (LN) is bonded to a silicon wafer. Lithium Niobate is a material with both optical and electronic properties, making it useful for various applications in the fields of photonics and electronics. The bonding of LN to silicon provides the advantages of both materials: the LN layer can be used for its optical properties, and the silicon substrate can be used for its electronic properties.
The process of bonding LN to silicon involves etching the silicon surface to provide a patterned surface and bonding the LN layer to the etched silicon using various bonding techniques, such as direct bonding or fusion bonding. The bonded LN/Si wafers are then used as a substrate for further processing to fabricate various optical and electronic devices, such as waveguides, modulators, and filters.
LN/Si Bonded Wafers are used in various applications, including telecommunications, data communication, sensing, and scientific instrumentation. The combination of optical and electronic properties in LN/Si Bonded Wafers makes them useful in many applications that require both optical and electronic functions.