SiC on AlN bonded wafers are engineered wafers that are formed by bonding a layer of silicon carbide (SiC) onto an aluminum nitride (AlN) substrate. The combination of these two materials provides a number of advantages, such as high thermal conductivity, high electrical conductivity, and high thermal stability. These properties make SiC on AlN bonded wafers useful for a range of applications, including high-power electronics, microwave devices, and high-frequency communication systems.
The bonding process typically involves creating a high-temperature bond between the two substrates using a chemical vapor deposition (CVD) process. This results in a very strong, stable bond that can withstand high temperatures and other environmental conditions. Additionally, the SiC on AlN bonded wafers can be processed and treated using a range of different techniques, such as etching, polishing, and doping, to create the desired electronic properties and performance.
Overall, SiC on AlN bonded wafers provide an excellent platform for a range of high-performance electronic devices, thanks to their combination of high thermal stability, high electrical conductivity, and high thermal conductivity.