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Silicon Bonded Wafers

When using wafer bonding technology, the device layer is formed by directly bonding a second silicon wafer with a dielectric layer, silicon dioxide SiO2 is mostly used. Polished, cleaned and activated by chemical or plasma treatment, the wafers are subjected to compression and annealing, as a result of which chemical reactions occur at the interface of the plates, ensuring their connection. The process of bonding of silicon wafers consists mainly of two steps: Connection of wafers with planar sides inside at room temperature due to van der Waals forces and dipole interaction of radicals adsorbed on the surface and heating this connected pair at an elevated temperature (800-1200 ° C) to replace weak intermolecular bonds with strong covalent ones. The most important problem in the silicon wafer bonding method is the presence of areas with no contact (macro- and microvoids due to microparticles and surface irregularities), which reduce the bonding force between silicon wafers and the yield of the structures.

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Shenyang Silicon Technology Co., Ltd.

, CN Manufacturer

8" thin-film SOI, 8" epitaxial SOI, 6"-8"thick-film SOI, 6"-8" direct bonded silicon wafer, 6"-8" patterned SOI, 8"ultrathin film SOI and 8"epitaxial wafers.

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Soitec

, FR Manufacturer

SOI wafers and engineered substrates

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