AlGaAs/GaAs HBT Epiwafers

Epi structures grown on GaAs and InP.

Small quantity epi-service on various substrates including Si, SiC and Sapphire but not limiting by them.

Microelectronics and optoelectronics epi-technology of III-V compounds with research and development and large-scale production by molecular beam epitaxy (MBE) technology.

MOCVD wafer growth services in R&D and small scale production of compound semiconductor devices (InP / GaAs/ GaSb/ InAs ). device simulation and epitaxial design of lasers, LEDs, detectors, and solar cells.

GaAs based epiwafers for FP/DFB/VCSEL/PD, InP based epiwafers for FP/DFB/PD/APD

RF and Photonics epiwafers. GaAs InP InAs InSb GaSb CZT Substrates. Nanoimprint services.

GaN substrates, templates and epiwafers. AlN templates. GaAs epiwafers. KNN piezoelectric thin films.

Compound epitaxial wafers

GaN, InP, GaAs and SiC epiwafers.

Manufacturer of II-IV and III-V epiwafers, foundry and epitaxial services.

Epiwafer foundry. Manufacturer of epiwafers for HBT, HEMT, pHEMT, BiHEMT, GaN. Optoelectronic epiwafers for PD, APD, FP-LD, VCSEL, DFB laser diodes. Solar cell epiwafers.

R&D, production and marketing of full-color, ultrahigh-brightness LED epitaxial wafers, chips, III-V compound semiconductors, microwave communication IC and power devices and optical communication components.

Manufacturer of silicon wafers, compound semiconductor wafers, LED chips and epiwafers. Photoresists.