GaN Epi on Sapphire for HEMT

GaN-on-Si for vertical HEMT, GaN-on-Si for power device, GaN-on-Si for MEMS devices, AlN template on Si for filters, GaN-on-Sapphire for HEMT/SBD

SiC/SiC Epitaxy Wafer Service on 6”, as well GaN/Si on 6" and 8"

GaN-on-Si, GaN -on-SiC epitaxial wafers, and related chip design.

Small quantity epi-service on various substrates including Si, SiC and Sapphire but not limiting by them.

GaN-on-Si for Power, GaN-on-HR_Si for RF, GaN-on-SiC for RF, GaN-on-Sapphire for RF, GaN-on-Si for LED, GaN-on-Sapphire for LED, GaN-on-GaN

GaN epiwafers, GaN-on-Si wafers, GaN-on-SiC wafers, GaN epiwafers.

Customized wafers of (AlGaIn)N epi structures for HEMTs, LEDs and LDs grown on GaN bulk substrates, sapphire, SiC and Si (up to 4 inch diameter).

Epiwafers on GaN, Sapphire, and SiC by MOCVD

GaN wafers

QST substrates for GaN film growth. GaN wafer and device design and development

Epiwafers and foundry services

Supplier of epitaxy, foundry services and MMICs based around the most advanced III-V processes, in particular in GaN and GaAs semiconductor technologies.

R&D, production and marketing of full-color, ultrahigh-brightness LED epitaxial wafers, chips, III-V compound semiconductors, microwave communication IC and power devices and optical communication components.

GlobalWafers Co., Ltd. is the largest company specializing in 3” to 12” silicon wafer manufacturing in Taiwan, possessing a complete production line from ingot growth, slicing, etching, diffusion, polishing and epitaxy.

Manufacture CZ/FZ/NTD Silicon ingots, Epi wafers, polished wafers, Antimony-doped wafers, etched wafers, TVS wafers, Arsenic-doped wafers, ultra thin wafers, deep diffusion wafers, solar ingot and wafers, cells, modules and Sapphire wafers.

Manufacturer of materials for semiconductor industry

Manufacturer of GaN and SiC substrates and epiwafers.