Gallium Nitride (GaN) on Glass Wafers is a combination of GaN and glass, which is used as a substrate material in the microelectronics and semiconductor industries. GaN is a high-performance material that has many desirable properties such as high electron mobility, high thermal stability, and wide bandgap. By depositing GaN onto a glass substrate, it is possible to create a high-quality layer of GaN that can be used as a substrate material in the manufacture of high-performance electronic devices. The properties of the glass substrate, such as transparency, thermal stability, and chemical durability, make it an attractive substrate material for use in GaN-based electronics. However, it is important to consider the differences in thermal expansion coefficients between GaN and glass when depositing GaN onto glass, as this can affect the performance and reliability of the final device.