GaN on SiC Wafers

SiC Substrates N-type, SiC Substrates SI-type, SiC Epitaxy Wafer, GaN Epitaxy on SiC, GaN Epitaxy on Si, SiC Puck (Polytype 4H), Moissanite Rough Stone

IC design and foundry. III-V materials (GaN, AlN, InAlN, AlGaN), epitaxial wafers (up to 6um in thickness on 8-inch Silicon wafer), high-voltage power switching (650V HEMTs and SBDs) and RF amplifier devices (sub-6GHz and mmWave).

GaN-on-Si for Power, GaN-on-HR_Si for RF, GaN-on-SiC for RF, GaN-on-Sapphire for RF, GaN-on-Si for LED, GaN-on-Sapphire for LED, GaN-on-GaN

GaN epiwafers, GaN-on-Si wafers, GaN-on-SiC wafers, GaN epiwafers.

Customized wafers of (AlGaIn)N epi structures for HEMTs, LEDs and LDs grown on GaN bulk substrates, sapphire, SiC and Si (up to 4 inch diameter).

Epiwafers on GaN, Sapphire, and SiC by MOCVD

GaN substrates, templates and epiwafers. AlN templates. GaAs epiwafers. KNN piezoelectric thin films.

QST substrates for GaN film growth. GaN wafer and device design and development