ADVANCED EPI MATERIALS AND DEVICES LTD
, GB Manufacturer
Ge, SiGe, GeSn on silicon epitaxial wafers. SiC and Cubic Silicon Carbide (3C-SiC) on Silicon wafers.
Soitec
, FR Manufacturer
SOI wafers and engineered substrates
SiGe Strained Silicon Wafers
SiGe (Silicon Germanium) strained silicon wafers are a type of substrate material commonly used in the production of advanced semiconductor devices such as high-speed transistors and microwave applications. The SiGe material is grown on a silicon substrate and subjected to strain to enhance its electrical and thermal performance compared to conventional silicon wafers. SiGe strain engineering enables the creation of high mobility channels for better device performance, making these wafers suitable for high-performance applications such as 5G wireless communication and high-speed computing. Straining in SiGe strained silicon wafers is typically achieved through the growth of a SiGe layer on top of a silicon substrate, with the lattice constant of the SiGe material being different from that of the silicon substrate. This mismatch in lattice constants causes the SiGe layer to be strained, leading to improved electron mobility and enhanced performance in electronic devices. The growth of the SiGe layer can be achieved through various methods such as molecular beam epitaxy (MBE), chemical vapor deposition (CVD), or metal organic chemical vapor deposition (MOCVD). The precise method used will depend on the desired properties of the strained SiGe layer and the desired production volume and cost.