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TEOS (Thethraethil Orthosilicate) Silicon Wafers

TEOS (Tetraethyl orthosilicate) is a chemical precursor used in the chemical vapor deposition (CVD) process to grow silicon dioxide (SiO2) films on silicon wafers. The TEOS is deposited as a gas and reacts with other species in the reactor to form a solid, high-quality SiO2 film. This process is used to fabricate various electronic devices, including MOS transistors, memory cells, and high-density interconnects. TEOS-grown SiO2 films have high thermal stability, good dielectric properties, and are widely used in the semiconductor industry. In the TEOS process, the chemical precursor is introduced into a deposition chamber, where it reacts with silane (SiH4) gas to form a silicon dioxide (SiO2) film on the surface of a silicon wafer or glass substrate. This process is commonly used to create dielectric films for insulation and passivation in microelectronic devices, as well as for patterning photoresists in lithography processes. The TEOS process is widely used in the semiconductor industry due to its ability to produce high-quality, uniform silicon dioxide films with precise control over film thickness, composition, and doping.

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Polishing Corporation of America

, US Manufacturer

Silicon and sapphire wafer manufacturer, reclaim services, wafer services of dicing, grinding, thin film deposition

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Rogue Valley Microdevices

, US Manufacturer, Service Company

Wafer services and MEMS foundry

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Virginia Semiconductor Inc

, US Custom Manufacturer

Custom Silicon Wafer Manufacturer

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3D-Oxides

, FR Manufacturer

Manufacturer of thin film wafers. Thin film growth starting from chemical precursor synthesis to process development for CBVD (Chemical Beam Vapour Deposition) systems, to material science engineering up to first concepts in devices development.

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Soitec

, FR Manufacturer

SOI wafers and engineered substrates

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