FLOSFIA Inc., headquartered in Kyoto, Kyoto prefecture, Japan, is a spin-off from a research of Kyoto University, specializing in film-formation by mist chemical vapor deposition (CVD). Making use of physical properties of gallium oxide (Ga2O3), FLOSFIA has devoted to development of low-loss power devices. FLOSFIA succeeded in a development of a Schottky Barrier Diode (SBD) with the lowest specific on-resistance of any SBDs currently available on the market (through an internal investigation), realizing technologies linked to power loss reduction that is reduced up to 90 percent less than before. FLOSFIA will now develop its own production lines with a view to launching commercial production in 2018.FLOSFIA produces a variety of thin films, enhancing MISTDRY™ technology, achieving commercialization of power devices, and realizing application of its technology to electrode materials, oxide compounds with functional properties for electronic devices, plating and polymers.
