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Ion Implantation Equipment

Ion implantation is a new method for introducing dopants at room temperature into silicon wafers to form junctions. Ionized impurity atoms (i.e., atoms deprived of one or more electrons) are accelerated to high energy by passing them through a potential difference of tens of thousands of volts. At the end of the path, the atoms bombard the wafer and penetrate to different depths depending on their mass and energy. Just as with conventional diffusion, an oxide layer or photoresistive mask selectively masks the plate from ions. A typical ion doping system or ion implanter consists of an ion source (a source of gaseous dopants, usually in small bottles), an analyzer, an accelerator, focusing lenses, a neutral beam trap, a scanning device chamber, and a vacuum system (usually consisting of three separate units located on the same line of forevacuum and oil diffusion pumps). The flow of electrons is obtained from a hot cathode using resistance, an arc discharge, or an electron beam of a cold cathode. Usually, after ion doping with Nissin ion implanter, Eaton Ion Implanter or Varian e500 ion implanter, a high-temperature annealing step is performed at a temperature of 900 to.1000C This is annealing performed with a laser beam or pulsed annealing with an electron beam source. Annealing reduces the number of defects in the regular crystal lattice on the outer surface of the alloyed plate, caused by ion bombardment of impurities. With the development of a safe supply system for boron trifluoride, phosphine and arsine cylinders used in ion doping plants, the likelihood of catastrophic releases of these gases has been greatly reduced. Small gas cylinders are filled with a compound in which arsine, phosphine and boron trifluoride are adsorbed. Gases are drawn out of cylinders by vacuum. Ion doping plants represent one of the most significant electrical hazards in the semiconductor industry. Even after turning off the power, the possibility of electric shock remains, so before working inside the installation, this possibility must be eliminated. Careful consideration should be given to the maintenance operations and risk factors of new equipment, especially ion alloying plants. While servicing the low temperature adsorption pump of an ion doping plant, a negative effect of 60 ppb of hydride gases (probably a mixture of arsine and phosphine) was found. In addition, high concentrations of arsine and phosphine can be released into the air by contaminated parts of the ion alloying plant that are removed during the preliminary inspection. Portable vacuum cleaners with high efficiency particle dispersion (HEPA) filters are used to clean arsenic-contaminated work surfaces in ion doping areas. Emissions in excess of 1000 have been reported when HEPA vacuums were not properly cleaned. When HEPA vacuum cleaners are emptied in the work area, they can also emit the characteristic odor of hydrides associated with beam line cleaning of an ion doping plant. There are no reports of serious gas leaks during oil changes in vacuum pumps. Perhaps because they are closed systems. The lack of data may also be due to the low levels of hydride emissions from used oil. A study was carried out: 700 ml of used oil of a foreline pump was heated from an ion alloying unit, in which arsine and phosphine were used. Hydrides in the air near the pump were detected only when the pump oil temperature was higher. Since the operating temperature for mechanical foreline pumps must be in the range of 60 to , the study did not reveal a significant risk. With ion doping, X-rays are formed in accordance with the technology. Most ion doping plants are shielded (lead plates are placed around the ion source and adjoining plant access doors) to keep radiation levels below 2.5 microseverts (0.25 millirem) per hour (Maletskos and Hanley 1893). However, in older models of surface installations, x-ray leaks in excess of 20 microseverts per hour () have been reported (Baldwin, King and Scarpace 1988). This level was reduced to 2.5 or less after the installation of additional lead plates. In another old model ion doping unit, X-ray leakage was found near the access door (up to 15) and viewing window (up to 3). Additional lead shields were installed to mitigate potential exposure. In addition to X-ray exposure from ion doping plants, there is a potential for neutron production when the plant is operated at or above 8 million electron volts (MeV) or if deuterium gas is used as the ion source

High Current Ion Implanter (7)

Medium Current Ion Implanter (7)

High Voltage Ion Implanter (6)

Doping Equipment (0)

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Sumitomo Heavy Industries Ion Technology Co., Ltd

, JP Manufacturer

Ion implanter

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SHELLBACK Semiconductor Technology

, US Distributor, Manufacturers' Rep

Semitool Wet Chemical Process Tools, Varian ion implant systems, track solutions and wafer carrier inspection equipment for the semiconductor, TFH, CPV, MEMS, LED, III/V markets

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Nissin Ion Equipment Co., Ltd

, JP Manufacturer

Ion Implanter for Semiconductor Process and FPD

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China Electronic Technology Group Corporation (CETC-E)

, CN Manufacturer

Ion implanter family from medium current, high current and high energy implanters, to implanters for special applications and third-generation semiconductors for 28-nanometer manufacturing process. Solar manufacturing equipment.

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ion beam services S.A., IBS

, FR Manufacturer

Ion implantation equipment and ion implantation services. Equipment service and upgrade, spare parts supply.

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centrotherm international AG

, DE Manufacturer

Production equipment and turnkey solutions for PV, semiconductor and microelectronics. Diffusion, oxidation, annealing, CVD equipment. Furnaces for advanced packaging.

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ULVAC, Inc

, JP Manufacturer

Vacuum equipment, peripheral devices, vacuum components and materials for the display, solar cell, semiconductor, electronics.

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Kingstone Semiconductor

, CN Manufacturer

Ion implantation equipment

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Axcelis Technologies

, US Manufacturer

Innovative Ion Source Technology, Ion Implanters

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Arcadia Engineering Services Pte

, SG Service Company, Manufacturers' Rep

Provider of engineering solutions within the area of wet chemical etch and high purity chemical applications.

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