Doping equipment refers to tools used in semiconductor fabrication for adding impurities (dopants) to a material, typically a semiconductor, in order to change its electrical properties. This allows for the creation of p-type and n-type semiconductors, which are critical for the functioning of transistors and other devices. The equipment used for doping typically involves ion implantation, which involves firing ions at the surface of the semiconductor wafer. The implanted ions diffuse into the wafer and form a doped layer, altering the electrical properties of the material. Different types of ion implanters are designed for different applications, with different levels of precision, speed, and cost. Some common manufacturers of doping equipment include ASM International, Axcelis Technologies, and Lam Research. Other doping equipment used in semiconductor manufacturing include diffusion furnaces, chemical vapor deposition (CVD) systems, and molecular beam epitaxy (MBE) systems. These techniques are used to deposit or introduce specific impurities into a material, such as a semiconductor, to create or modify its electrical properties. The choice of equipment depends on the type of doping, the substrate material, the desired impurity concentration and profile, and the processing conditions required.