SOI (Silicon on Insulator) bonders are specialized wafer bonding equipment used for creating SOI wafers. SOI wafers are multi-layer wafers with a thin layer of silicon placed on top of a thicker insulating layer. The bonding process is done by applying heat and pressure to the two wafers to be bonded together, creating a permanent bond. There are different types of SOI bonding techniques like direct bonding, Smart Cut, and Bond and Etch Back, each with its own specific steps, equipment and process parameters. These bonders are used in semiconductor manufacturing to create SOI wafers which are used in various applications including microelectronics, photonics, and high frequency electronics.
SOI (Silicon-On-Insulator) bonding is a process used to create SOI wafers for integrated circuit manufacturing. There are three main methods for SOI bonding:
Smart Cut: This is a proprietary method developed by Soitec that involves cutting and transferring a thin layer of silicon from a donor wafer to a handle wafer.
Direct Bonding: This is a process in which the two wafers are brought into close proximity and then bonded using heat and pressure. The bonding process results in an atomically clean and highly uniform interface between the two wafers.
Bond and Etch Back: This process involves bonding the two wafers and then etching away the handle wafer to create an SOI substrate. The etching process can be done using various techniques, including wet chemical etching, dry etching, and reactive ion etching.