Strong knowledge base with R&D scientists, engineers and experienced management, makes anything of importance to our customers in sputtering technology possible.
Capabilities of our sputtering systems
DC magnetron sputtering , faster metal and dielectric deposition.
RF sputtering to sputter dielectrics and magnetic materials. RF bias for sputter etching and deposition with bias.
Reduced particle counts
Up to 6 different materials without vacuum breaks.
PVD sputtering for substrates 25mm-450mm.
Low temp deposition
The wafer table is actively cooled with sub-zero coolant
Thick film depositions increase the table temp to ~125C with house water cooling.
Using a special chiller with water inlet temp of 2-4 ºC the temperature of the wafer will be down to 80C.
Class 100 Clean Room
Hionix is located in a 45,000 sq. ft building.
Clean room area is 6000 sq. ft
Clean room has micro environments that exceeds class 100 specifications.
Wafer are loaded in FOUP, Cassette, wand depending upon the size and customer requirements.
Film uniformity:
The uniformity optimized with the magnetic field configuration
Uniformity can be fine-tuned based on customer requirements to 1 sigma <1%.
Target erosion had no perceivable effect on deposition uniformity and thickness
Lead-Time
Standard production lead-time is less than a week for a majority of services.
R&D programs lead-times may be longer depending upon complexity.
Characteristics of DSource Dynamic Magnetron Sputter Deposition:
High Deposition Rates 1 micron/min
RF bias for sputter etching and deposition with bias
Water Cooled table for controlled substrate temperature deposition below 40 °C
Batch processing
Almost any metallic target material can be sputtered without decomposition
Conductive materials can be deposited using a direct current (DC) power supply
Nonconductive materials can be sputtered by using radio frequency (RF)
Oxide coatings can be sputtered (reactive sputtering)
Excellent layer uniformity ~ Rs 5%
Better Film Property Control (grain size, stress, etc.)
Easy Target Change procedure
The uniformity optimized with the magnetic field configuration
Process control Parameters:
Process Pressure
Sputter voltage
Substrate Bias
Throw Distance
Substrate temperature
Particle Energy
