Efficient Power Conversion Corp (EPC), headquartered in El Segundo, CA, USA, specializes in enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications. Recently, EPC’s GaN intellectual property rights were upheld for the third time in three months.

The US International Trade Commission (ITC) confirmed the validity of two key EPC patents, while also finding that Innoscience (Zhuhai) Technology Co Ltd and its affiliate Innoscience America Inc. infringed EPC’s foundational patent. This decision aligns with similar validations by the China National Intellectual Property Administration (CNIPA) for EPC’s counterpart patents in China.

EPC believes that the ITC’s initial determination may lead to a ban on importing Innoscience’s infringing products into the USA later this year. CEO and co-founder Alex Lidow emphasized the significance of the ITC’s findings, reflecting nearly two decades of hard work and research that went into developing EPC’s valuable intellectual property portfolio.

The ITC’s preliminary ruling confirmed the validity of both US patents asserted by EPC against Innoscience. Specifically, it found infringement of EPC’s foundational patent (US Patent No. 8,350,294), which is widely used across multiple industries. The second EPC patent (US Patent No. 8,404,508) was deemed valid but not infringed by Innoscience. The Commission’s final determination is expected on November 5, 2024 .