On October 29, 2024, Infineon Technologies AG announced a significant advancement in semiconductor technology by successfully handling the world’s thinnest silicon power wafers, measuring only 20 micrometers thick and 300 millimeters in diameter. These ultra-thin wafers are a quarter the thickness of a human hair and half that of conventional state-of-the-art wafers, which typically range from 40 to 60 micrometers.
Jochen Hanebeck, CEO of Infineon, emphasized that this achievement reflects the company's commitment to delivering exceptional customer value by pushing the boundaries of power semiconductor technology. The new ultra-thin silicon wafers are expected to enhance energy efficiency, power density, and reliability in power conversion solutions across various applications, including AI data centers and consumer electronics. By reducing the thickness of the wafers, substrate resistance is halved, leading to over 15 percent reduction in power loss compared to traditional silicon wafers.
This innovation is particularly crucial for high-end AI server applications, where energy demands are increasing. Voltages are reduced from 230 volts to below 1.8 volts for processors, making the efficient power delivery design essential. Adam White, Division President of Power & Sensor Systems at Infineon, noted that as the energy demand for AI data centers continues to rise, the need for energy efficiency becomes increasingly important.
Infineon forecasts substantial growth in its AI business, projecting it could reach one billion euros within the next two years. Engineers at Infineon had to develop a unique wafer grinding technique to address the challenges of manufacturing a 20-micrometer wafer, as the metal stack holding the chip is thicker than the wafer itself. Overcoming issues such as wafer bow and separation is vital to ensure the stability and robustness of these thin wafers.
The innovative process builds on Infineon’s established manufacturing expertise and integrates seamlessly into current silicon production lines, ensuring the highest yield and supply security without added complexity. The ultra-thin wafer technology has been tested and qualified for use in Infineon's Integrated Smart Power Stages (DC-DC converters), which have already been delivered to customers.
This breakthrough reinforces Infineon's standing as a leader in semiconductor manufacturing, backed by a strong patent portfolio related to the new wafer technology. The company expects the ultra-thin technology to replace conventional wafer technology for low-voltage power converters within the next three to four years.
Infineon's diverse product and technology portfolio, which includes silicon, silicon carbide, and gallium nitride devices, supports innovations essential for decarbonization and digitalization. The first public demonstration of the ultra-thin silicon wafer will occur at electronica 2024, scheduled for November 12-15 in Munich at Hall C3, Stand 502. This development marks another milestone in Infineon's commitment to pioneering advancements in the semiconductor industry.
