CompoundTek provides a world class commercial 8” foundry services with highly advanced silicon photonics fabrication techniques. We also enable seamless porting from other Silicon Photonics foundry into our fab. Our tools and capabilities includes:
- ASML 1400 ArF scanner (able to define below 90nm waveguides by ArF scanner)
- DUV KrF scanner
- i-line scanner
- Cu CMP BEOL
- SMIF pods Class 1 environment
- >5,000 wafers/month capacity
We offer customized support and technical consultancy in mask layout conversion from other foundry’s PDK or process flow. CompoundTek has the silicon photonics technology expertise to help revise and support customers if the design falls short of the minimum criteria. We also offer silicon photonics electro-optic and radio frequency (RF) testing capabilities. On more complex integration of silicon photonics with others technologies like, for example, thru silicon via (TSV), micro-electromechanical systems (MEMS), Si complementary metal oxides (CMOS) logic.
Silicon photonics continue to be the leading technology enabler in data communications making faster interconnect solutions with higher-density optical connectivity for 100GbE, 400GbE, and beyond. The demand today come from data centers that require solutions that move data faster and more efficiently including fibre-to-the-home (FTTH) as more functionality will be needed such as wavelength tuning and switching. Other applications include biomedical sensing, LIDAR, and those in the aerospace and aeronautic industry. CompoundTek enables companies to fabricate their silicon PICs using our highly advanced solutions. All silicon photonics basic building blocks for Multi Project Wafer(MPW) and full reticle fabrication run of passive and full photonics integrated circuits with active and passive components:
Si waveguides (Rib, Strip and Si grating coupler)
SiN waveguides
Si photonics crystal with grating
TiN heater and ion implantation doped heater.
Six ion implantations (N, N+, N++, P, P+, and P++ )
Ge photodetectors (lateral, vertical NIP and vertical PIN)
Two Cu BEOL metal layers with W contact Si-contact/Ge-contact and Al bondpad top metal OR Two Al thick first metal BEOL with CMP and W filled via
Deep trench dry etching (thick oxide and deep trench Si)
Oxide cladding dry etching
Some of the silicon photonics active and passive photographs, are shown below:
HighSpeed MZI Modulator
High Speed MZI modulator (~30GHz Electro-optic S21 3dB bandwidth)
50Ghz Electro-optic
50GHz Electro-optic S21 3dB Bandwidth Ge Vertical Photodetector
45deg facet Si waveguide_3
Angled facet of Si Waveguide
Deep Trench and Oxide Cladding
Deep Trench and Oxide Cladding
Si Passive Waveguides
Si Passive Waveguides
High Speed Ring Mod
High Speed Ring Modulator
TiN heater and grating coupler_1
TiN Heater and Grating Coupler
In addition, CompoundTek has a complete silicon photonics electro-optic and testing capability.
The design rule of each layer is specified in the process design kits (PDK). The PDK content covers the following:
Si photonics full stack schematics
Design rule (DR)
Si photonics mask Graphic Database System (GDS) layers
Mask tape-out process flow
Max MPW and full reticle field size restriction
Design rule check (DRC)
Basic Si photonics design blocks GDS examples (Si waveguide, SiN waveguide, grating coupler, fiber edge coupler, vertical Ge photodetector, Mach-Zehnder interferometer (MZI) modulator, etc.)
