InAs/InAsSb photovoltaic detector chips are semiconductor devices that convert incoming infrared radiation into electrical signals. They are typically composed of multiple layers of InAs (indium arsenide) and InAsSb (indium arsenide antimonide) alloys, which are carefully designed to absorb specific wavelengths of infrared light. When infrared radiation is absorbed by the detector, it creates electron-hole pairs, which generate a photocurrent that can be measured. These detectors are commonly used in applications such as gas sensing, remote temperature sensing, and thermal imaging.