Brolis Semiconductors develops a range of mid infrared laser products and system solutions. Combining the unique know-how in long wavelength material epitaxy and mid infrared laser chip technology, Brolis offers a complete mid infrared laser product line in the entire spectral range from 1800 nm to 3000 nm for most demanding applications.
Products are divided into four main groups: high-power CW multimode laser diodes, single-TE00 mode laser diodes, broadband gain chips and single-frequency lasers.
Brolis is a leading global manufacturer for mid-infrared laser products holding numerous performance records such as record-low input threshold powers below 10 mW, wall-plug efficiency over 30 % and single-frequency output power up to 40 mW with tuning range over 100 nm per chip.
Company has entire state-of-the-art technology infrastructure in-house: from wafer growth by means of molecular beam epitaxy to fully automated die bonding (hard solder, soft solder, epoxy), wire bonding and micro-optics assembly. This allows us to be extremely flexible to deliver your most-demanding custom solution: from single-frequency seed laser to high-power multimode laser diode pump module.
Typical mid infrared laser applications include: gas sensing, tunable spectroscopy, night-vision, surveillance, infrared countermeasures and industrial process monitoring.
Brolis Semiconductors runs an all in-house industrial facility for molecular beam epitaxy (MBE) of advanced III-V semiconductor compounds. We are known to be the best engineering house globally for complex materials for infrared optoelectronics technology or ultra-high speed electronics.
Brolis facility feature:
– Industrial multi-wafer MBE facility based on Veeco Gen200Edge for AlGaInAsSb materials
– Muti-wafer mode: 4×4-inch, 7×3-inch, 13×2-inch single growth capacity
– In-house HRXRD, EL, PL, Van Der Pauw; FTIR.
Wafer growth, qualification and packaging is carried out in the class ISO 6 (class 1000) cleanroom environment.
We have experience in developing and scaling epitaxy based on different alloy combinations: GaAs/AlGaAs/InGaAs, AlInAs/InGaAs/InP, AlGaAsSb/GaInAsSb/GaSb, InAs/GaSb/AlSb, etc
Our experimental room-temperature electron mobility is up to 9000 cm2/(Vs) for GaInAs/AlGaAs/GaAs and 26 000 cm2/(Vs) for InAs/AlSb/GaAs structures.
