InGaAs/InP Photodetector Epiwafers

Microelectronics and optoelectronics epi-technology of III-V compounds with research and development and large-scale production by molecular beam epitaxy (MBE) technology.

MOCVD wafer growth services in R&D and small scale production of compound semiconductor devices (InP / GaAs/ GaSb/ InAs ). device simulation and epitaxial design of lasers, LEDs, detectors, and solar cells.

GaAs based epiwafers for FP/DFB/VCSEL/PD, InP based epiwafers for FP/DFB/PD/APD

RF and Photonics epiwafers. GaAs InP InAs InSb GaSb CZT Substrates. Nanoimprint services.

GaN substrates, templates and epiwafers. AlN templates. GaAs epiwafers. KNN piezoelectric thin films.

Manufacturer of GaAs-based laser diodes covering 780nm-1340nm, QD and QW epiwafers,

Compound epitaxial wafers

MBE epiwafers, high power laser diode and sensor chips

High speed 850 nm vertical cavity surface emitting laser (VCSEL) and p-i-n photodiode epiwafer manufacturer.

Manufacturer of II-IV and III-V epiwafers, foundry and epitaxial services.

Wide range of epitaxial heterostructures grown by MOCVD (or MOVPE)

Epiwafer foundry. Manufacturer of epiwafers for HBT, HEMT, pHEMT, BiHEMT, GaN. Optoelectronic epiwafers for PD, APD, FP-LD, VCSEL, DFB laser diodes. Solar cell epiwafers.

Producer of Indium Phosphide substrates covering all dopants (Fe, Sn, Zn, S) and all diameters (2", 3", 4").