Connector Optics LLC is a high speed 850 nm vertical cavity surface emitting laser (VCSEL) and p-i-n photodiode epiwafer manufacturer. The company offers VCSEL based solutions for data transmission via optical fiber networks at speeds beyond 25 Gbit/s per channel.
Connector Optics was established in 2009 in St.Petersburg, Russia.
Connector Optics has its own capacity for design and fabrication of innovative nanotechnology products of various purposes: laser diodes, incl. VCSELs, p-i-n photodiods, microwave transistors and diodes, etc. Company production facilities are equipped with the state of the art Riber 49 MBE machine with various material sources available for use, and advanced characterization tools.
Connector Optics is a team of professionals who came from A.F. Ioffe Physical Technical Institute (St.Petersburg, Russia) and St.Petersburg Academic University (Russia). These institutions are among the key world leaders in R&D of semiconductor lasers. In 2000 Academician Zhores Alferov was awarded the Nobel Prize in Physics for his contribution to the research of semiconductor nanoheterostructures for high-speed optoelectronics that was headed by him in A.F. Ioffe Physical Technical Institute. Connector Optics’ specialists have long-term experience in epiwafer growth both for industrial and R&D purposes also by using unique growth techniques. They also participated in big international R&D projects in Germany and Taiwan.
Connector Optics is continually working on innovations implying both modification of the existing products and developing new types of nanotechnology products. The leading nanotechnology centers, such as the A.F. Ioffe Physical Technical Institute, the St.Petersburg Academic University, the Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences (Novosibirsk, Russia), and Technical University of Berlin (Germany), Program Systems Institute of Russian Academy of Sciences (Pereslavl-Zalessky), are R&D partners of the company.
PRODUCTS
25 GBIT/S
VCSEL and VCSEL array chips (850 nm)
28 Gbit/s VCSEL and VCSEL array chips 850 nm
Product code:
CO-V850-25-1 1x1 chip
CO-V850-25-4 1x4 array
CO-V850-25-12 1x12 array
Datasheet [Download PDF]
PD and PD array chips (850 nm)
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Product code:
CO-V850-25-1 1x1 chip
CO-V850-25-4 1x4 array
CO-V850-25-12 1x12 array
Datasheet [Download PDF]
40 GBIT/S
VCSEL chips (850 nm)
40 Gbit/s VCSEL chips 850 nm, R&D
Product code:
CO-V850-40-1 1x1 chip
Optical and Electrical Characteristics
[Download PDF]
EPIWAFERS
Epiwafers
Molecular beam epitaxy (MBE) on GaAs and InP substrates
Epiwafers for optoelectronic and microwave devices: laser diodes including VCSELs, photodiodes, microwave transistors, and diodes
100% non-destructive epiwafer characterization (defect analysis, PL spatial mapping, sheet resistance)
Careful calibration of epi-layer composition, thickness, and doping using X-ray characterization, PL measurements, Hall technique, and ECV profiling
Customer’s design
