Wafers and Substrates

Manufacture and sale of diamond crystals and various sensors and electronic devices using diamond crystals

SiC power semiconductor products. We can produce 60,000 pieces of 6-inch SiC MOSFET or SBD epitaxy and wafers, 6.4 million power modules, and 18 million power single tubes annually.

RF series products, power series products, and high-end heat dissipation materials, and provides high-power packaging and testing services.

Glass substrates for semiconductor packaging

VCSEL Epi wafer 940nm, 850nm. Custom designed AlGaAs and InGaAlP based epi wafers.

Manufacture of crystal growth equipment to develop dedicated furnaces for the 4H SiC single crystal growth process, taking the next step in the manufacture of 8” 4H SiC single crystals. SiC crystals

GaN-on-Si for vertical HEMT, GaN-on-Si for power device, GaN-on-Si for MEMS devices, AlN template on Si for filters, GaN-on-Sapphire for HEMT/SBD

SiC/SiC Epitaxy Wafer Service on 6”, as well GaN/Si on 6" and 8"

GaN-on-Si, GaN -on-SiC epitaxial wafers, and related chip design.

Polysilicon, Silicon nitride, Fumed Silica

Polycrystalline Silicon, Metallic Boron, Trichlorosilane, Fumed Silica "REOLOSIL", Tetrachlorosilane, High-purity Aluminum Nitride (AlN) Powder and Granules SHAPAL™ Aluminum nitride ceramics, Boron nitride, Photoresist Developer

Silicon epitaxial wafers 150mm/200mm/300mm. Buried Layer Epitaxial Foundry.

Silicon epiwafers 6" and 8", as well as smaller Si epitaxial wafers

Multilayer co-fired ceramic packages (HTCC, LTCC), ceramic substrates

AMB ceramic substrates. Research, design and prototype advanced packaging concepts. Low to medium package assembly and transfer to volume OSATs. Advanced transfer molding and sintering systems

Ceramic metallized substrates (DBC, AMB), ceramic packages for LED, IC