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Wafers and Substrates

For semiconductor ICs single-crystal substrates with high structural perfection and degree of purity are used. Depending on the electrical conductivity, the substrates are divided into two large groups: conductive (semiconductor) and non-conductive (dielectric) The use of non-conductive substrates significantly reduces parasitic connections between elements, increases the resistance of the IC to the effects of radiation and other unfavorable factors. The most common materials for non-conductive substrates are sapphire - single-crystal aluminum oxide Al2O3 α-modification and MgO × Al2O3 spinel. Single-crystal silicon (in the form of wafers up to 300mm in diameter) is most often used as a substrate for conducting substrates. Along with silicon, single crystal wafers of A3B5 semiconductor compounds (gallium arsenide GaAs wafers, gallium phosphide GaP wafers, indium arsenide InAs wafers, indium antimonide InP wafers, gallium antimonide GaSb wafers, silicon carbide SiC wafers, sapphire wafers etc.) are also widely used. Thin film substrates like SOI, GaN on sapphire or GaN on silicon, silicon on sapphire, and other wafers are used. Main producers for GaAs and InP wafers AXT, DuPont SiC wafers and other producers can be found in our directory. ICs based on GaAs are being especially successfully developed and put into practice. This material is capable of operating microcircuits at higher temperatures than silicon, and due to its high electron mobility, it allows manufacturing ICs with higher speed. In addition, compensated gallium arsenide has a very low electrical conductivity, due to which substrates made from this material combine the advantages of semiconductor and dielectric substrates. On the basis of technology, single-crystal substrates can also be divided into two groups: permanent and temporary. The first group includes substrates that play the role of supporting structures of IC elements and perform electronic functions from the beginning to the end of the technological process, retaining them during IC operation. An example is silicon substrates for bipolar ICs with electrical insulation of elements with a p-n junction. The second group includes those that participate in the technological process only at the initial stages of IC fabrication and play the role of initial surfaces for diffusion or, say, epitaxial growth. At the final stages of IC manufacturing, the material of such substrates is completely or partially removed, and the working part of the structure obtained on them is transferred to other (usually not single-crystal) substrates, which are already not only supporting structures, but also provide electrical insulation between elements. This functional role is retained by them both in subsequent production operations and during the operation of the IC. A typical representative of the substrates of the second group is single-crystal silicon wafers used to fabricate bipolar semiconductor ICs with dielectric interelement insulation.

Wafers (165)

Crystal Substrates (63)

Metallic Substrates (17)

Ceramic Substrates and Wafers (56)

Glass Substrates and Wafers (23)

Thin Film Substrates (74)

Epiwafers (100)

Engineered Substrates (30)

Polymer Substrates (2)

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Sumitomo Electric Co., Ltd

Osaka, JP Manufacturer

Manufacturer of heatspreader materials, high purity powders, components for semiconductor equipment