Wafers

Manufacture of crystal growth equipment to develop dedicated furnaces for the 4H SiC single crystal growth process, taking the next step in the manufacture of 8” 4H SiC single crystals. SiC crystals

GaN-on-Si for vertical HEMT, GaN-on-Si for power device, GaN-on-Si for MEMS devices, AlN template on Si for filters, GaN-on-Sapphire for HEMT/SBD

SiC/SiC Epitaxy Wafer Service on 6”, as well GaN/Si on 6" and 8"

Silicon Ingot, Silicon wafer, ST wafer (For Power device), Ultra High Flatness Wafer, Silicon material for far infrared rays: Germanium, HT silicon.

Global Silicon Carbide wafer manufacturing innovator. 150mm and 200mm Silicon Carbide (SiC) Ingot and Wafer for RF and Power Electronics. SiC Wafer Reclaim

Sapphire crystals, wafers and parts

Advanced thin film processing services. PVD Films, Thermal Oxides & Annealing, Silicon Wafers

Silicon Test Wafer, Dummy/Mechanical Wafer, Silicon Spacer wafer, Epitaxial wafer, photomask,

Test Reticles, Software, Position Calibration Wafers, Quantitative Phase Microscopy Target, Grating-Based Products.

At our production facility, we perform final processing and inspection of GaAs (gallium arsenide) substrates. SESMI is also responsible for the sales of GaAs substrates, along with substrates made from InP (indium phosphide) and GaN (gallium nitride)

Commercial Foundry for III-V Semiconductors targeting Integrated Photonics

Free-standing GaN wafers in 4 inch size

LGT single crystal ingot, Crystal Devices, Precision Measuring Instruments, Thin-film Submount, MEMS, Magnets, Ceramic Parts

SiC Substrates N-type, SiC Substrates SI-type, SiC Epitaxy Wafer, GaN Epitaxy on SiC, GaN Epitaxy on Si, SiC Puck (Polytype 4H), Moissanite Rough Stone

Equipment components, precision equipment, and advanced material businesses based on microfabrication and magnetic application technologies.

LEC GaAs crystals and wafers