Silicon carbide-based gallium nitride RF epitaxial wafer: used to prepare gallium nitride RF devices in various frequency bands, suitable for applications in RF fields such as cellular base stations, radar and limited TV infrastructure in the fields of networking, aerospace and defense.
Silicon-based GaN RF epitaxial wafer: used to make low-power RF devices, suitable for applications in RF fields such as sensors and wireless communications.
Silicon-based GaN power epitaxial wafer: used to prepare GaN power devices, suitable for photovoltaic inverters. new energy vehicles. Medium and low voltage fast charging and other power applications.
Silicon-based GaN RF epitaxial wafer: used to make low-power RF devices, suitable for applications in RF fields such as sensors and wireless communications.
Silicon-based GaN power epitaxial wafer: used to prepare GaN power devices, suitable for photovoltaic inverters. new energy vehicles. Medium and low voltage fast charging and other power applications.
