GaN Epi on Si for RF

GaN-on-Si for vertical HEMT, GaN-on-Si for power device, GaN-on-Si for MEMS devices, AlN template on Si for filters, GaN-on-Sapphire for HEMT/SBD

GaN-on-Si, GaN -on-SiC epitaxial wafers, and related chip design.

SiC Substrates N-type, SiC Substrates SI-type, SiC Epitaxy Wafer, GaN Epitaxy on SiC, GaN Epitaxy on Si, SiC Puck (Polytype 4H), Moissanite Rough Stone

Micro-photonic device technologies based on III-nitride wide bandgap semiconductors, aluminum nitride (AlN), gallium nitride (GaN), indium nitride ( InN) and their alloys (AlGaN, InGaN, and InAlGaN).

IC design and foundry. III-V materials (GaN, AlN, InAlN, AlGaN), epitaxial wafers (up to 6um in thickness on 8-inch Silicon wafer), high-voltage power switching (650V HEMTs and SBDs) and RF amplifier devices (sub-6GHz and mmWave).

GaN-on-Si for Power, GaN-on-HR_Si for RF, GaN-on-SiC for RF, GaN-on-Sapphire for RF, GaN-on-Si for LED, GaN-on-Sapphire for LED, GaN-on-GaN

GaN epiwafers, GaN-on-Si wafers, GaN-on-SiC wafers, GaN epiwafers.

Customized wafers of (AlGaIn)N epi structures for HEMTs, LEDs and LDs grown on GaN bulk substrates, sapphire, SiC and Si (up to 4 inch diameter).

GaN wafers

QST substrates for GaN film growth. GaN wafer and device design and development

Epiwafers and foundry services

Supplier of epitaxy, foundry services and MMICs based around the most advanced III-V processes, in particular in GaN and GaAs semiconductor technologies.

GlobalWafers Co., Ltd. is the largest company specializing in 3” to 12” silicon wafer manufacturing in Taiwan, possessing a complete production line from ingot growth, slicing, etching, diffusion, polishing and epitaxy.

Manufacture CZ/FZ/NTD Silicon ingots, Epi wafers, polished wafers, Antimony-doped wafers, etched wafers, TVS wafers, Arsenic-doped wafers, ultra thin wafers, deep diffusion wafers, solar ingot and wafers, cells, modules and Sapphire wafers.

Manufacturer of GaN and SiC substrates and epiwafers.