CorEnergy Semiconductor is a Zhangjiagang, SuZhou-based semiconductor company founded in 2010 by Dr. Gavin Zhu and a diverse team of experts with years of experience in materials, device designs and in-depth manufacturing know-how of both Silicon and GaN devices. We specialize in III-V materials (GaN, AlN, InAlN, AlGaN, etc.), epitaxial wafers (up to 6um in thickness on 8-inch Silicon wafer), high-voltage power switching (650V HEMTs and SBDs) and RF amplifier devices (sub-6GHz and mmWave) in our full-fledged 6- and 8-inch fabrication facility with a combined monthly throughput of >5000 GaN HEMT and Si MOSFET wafers. Our dedicated device and IC design teams stand ready to provide invaluable services to help our customers achieve world-class device performances and design wins.
GaN on Si EPI
Reach 8 inch
Compatible with Si devices technology
Low cost after mass production
GaN on SiC EPI
Reach 6、4 inch
Strong heat dissipation
Chip foundry platform
GaN power devices
Si power devices
GaN Schottky diode
Short reverse recovery time
High breakdown voltage
GaN power FEMT
High breakdown voltage
High transition efficiency
Module system
High integration
Low cost
High transition efficiency
GaN Epitaxy Wafers
GaN SBD on GaN
RF HEMT on SiC
Power HEMT on sapphire
HEMT on Si spec
GaN Device
01 Lithography (minimum line width 0.35um)
02 Metal sputtering（Ti、Al、TiN、Cu），Metal evaporation（Ti、Al、Ni、Pt、Mo、Ta、Ag、Co、Cr ,etc.）
03 Etch GaN, Si, SiO2, Si3N4, Al, TiN, Ni, Cr, Pt, etc.
04 Thin film PECVD deposition of SiO2, Si3N4, ALD deposition of Al2O3, AlN, LPCVD growth of polysilicon, Si3N4 and thermal oxygen deposition, oxidation diffusion, etc.
05 Ion implantation of N, B, P, BF2, As, Ar
06 TSV process
07 Grinding disc scribing and testing, etc.
