Epiwafers

SiC power semiconductor products. We can produce 60,000 pieces of 6-inch SiC MOSFET or SBD epitaxy and wafers, 6.4 million power modules, and 18 million power single tubes annually.

VCSEL Epi wafer 940nm, 850nm. Custom designed AlGaAs and InGaAlP based epi wafers.

GaN-on-Si for vertical HEMT, GaN-on-Si for power device, GaN-on-Si for MEMS devices, AlN template on Si for filters, GaN-on-Sapphire for HEMT/SBD

SiC/SiC Epitaxy Wafer Service on 6”, as well GaN/Si on 6" and 8"

GaN-on-Si, GaN -on-SiC epitaxial wafers, and related chip design.

Silicon epitaxial wafers 150mm/200mm/300mm. Buried Layer Epitaxial Foundry.

Silicon epiwafers 6" and 8", as well as smaller Si epitaxial wafers

Photonic components, modules and subsystems. customizing our core photonic technology in Indium Phosphide, Gallium Arsenide or Silicon, we will be happy to provide a private label solution to support your needs.

Silicon Test Wafer, Dummy/Mechanical Wafer, Silicon Spacer wafer, Epitaxial wafer, photomask,

Epi structures grown on GaAs and InP.

Small quantity epi-service on various substrates including Si, SiC and Sapphire but not limiting by them.

4-inch, 5-inch and 8-inch power semiconductor chips, as well as the analog and digital-analog IC chips

SiC Substrates N-type, SiC Substrates SI-type, SiC Epitaxy Wafer, GaN Epitaxy on SiC, GaN Epitaxy on Si, SiC Puck (Polytype 4H), Moissanite Rough Stone

Microelectronics and optoelectronics epi-technology of III-V compounds with research and development and large-scale production by molecular beam epitaxy (MBE) technology.

RF passive device design and manufacturing company that develops and builds novel, high-frequency 3D components

Growth of semiconductor nonlinear optical devices: saturable absorbers for lasers, saturable noise suppressor for improvement of optical signals, and photoconductive antennas for Thz generation and detection. Thin film stacks GaAs/AlAs/InAs on GaAs

Gallium Nitride (GaN) Wafers

Micro-photonic device technologies based on III-nitride wide bandgap semiconductors, aluminum nitride (AlN), gallium nitride (GaN), indium nitride ( InN) and their alloys (AlGaN, InGaN, and InAlGaN).