IntelliEPI provides customers with a variety of electronics and optoelectronics epi structures grown on GaAs and InP.
In addition, we work closely with our customers on the development of their next generation products. What distinguishes IntelliEPI from our competitors is our proprietary in-growth sensor technology with our MBE growth experience. IntelliEPI is able to use the in-growth sensor technology to supply customers with the best quality epi-wafers at low prices. With the assistance of this technology, IntelliEPI is the first in this industry to develop “production ready” 4 X 4 inch InP capabilities to supply InP epi-wafers to our customers.
IntelliEPI’s technology inventory ranges from IIIV-on-Si for post 22nm CMOS, to state-of-the-art IIIV large diameter IR materials growth. For IR material R&D, IntelliEPI’s efforts cover mid-IR GaAs-based QWIP to both mid and long-IR GaSb type-II SLS.
GaAs based Products
PHEMT (AlAs, InGaP Etch Stop)
InP based Products
HBT (C-doped,Be-doped, GaAsSb)
Sb based Products
Type II SLS Photodetectors
GaAsSb-base InP HBT
Epi-ready GaSb Substrates
III-V on Si
III-V on Ge
High In content InGaAs on Si
APD (Avalanche Photo Diode)
Lasers (750nm to 1100nm)
PIN (GaAs, InP)
Quantum Cascade Lasers
Gallium Arsenide (GaAs) pHEMT
Due to low noise and extremely fast switching speed, pHEMT (pseudo-morpic High Electron Mobility Transistor) technology based on GaAs is particularly attractive for high-speed RF electronic applications. The dominant market for pHEMT is RF switch (RF Switch) for wireless handset applications. In addition, pHEMT circuits are also used in applications such as WLAN (Wireless Local Area Network), fiber-optic communications, satellite communications, point-to-point microwave communications, satellite broadcasting, cable TV, digital TV applications, and automotive collision avoidance system (automobile radar).
Indium Phosphide (InP) HBT
InP-based HBT (Hetero-junction Bi-polar Transistor) is the preferred technology for high frequency power amplifier device/circuits, which typically requires excellent gain, band-width, and linearity. Key applications include 40 gigabit/sec (40G) and 100G high-speed fiber-optic telecom market. InP-HBT is used for high-speed electronics, laser drivers, and detector modules in these medium to long haul, and FTTX fiber-optic networks. In addition, InP-HBT technology is also heavily utilized for the extremely high performance market, such as high-speed test equipment and military applications.
Infrared light detector (IR sensors)
This product provides important functions in both military applications, such as target search and lock on, and commercial applications, such as security surveillance and night vision. Almost all infrared light detectors or focal plane arrays (FPA) utilize semiconductor material, such as Group II-VI of mercury cadmium telluride (HgCdTe, MCT)), III-V family, the quantum well infrared photodetectors (QWIP), and gallium antimonide type II strain layer superlattice infrared detector the (GaSb type II strained layer superlattice, T2SLS). Through the commercial semiconductor foundry production, T2SLS has the potential for superior performance when compared with MCT, and at a lower cost.
High-speed High-frequency Surface-Emitting Laser (VCSEL), Optical Receiver (PIN), Avalanche Photo Diode (APD)
Several varieties of wavelength semiconductor laser wafers are used in the field of fiber-optic communications and data transfer. The two main types of optical receiver photodiodes are PIN diode and APD (Avalanche Photo Diode). For low frequency applications, the industry utilizes Metal-Organic Chemical Vapor Deposition (MOCVD) to grow wafers. However, in high-frequency applications, requiring higher accuracies for epitaxial layer thickness and doping concentration, the molecular beam epitaxy (MBE) growth technique has become the preferred growth method. For example, the InAlAs / InP APD wafers, the P type dopant should be controlled in 10e17 cm-3 range – a level of precision only achievable through MBE techniques.