InGaAs/InP VCESL Epiwafers

Epi structures grown on GaAs and InP.

Small quantity epi-service on various substrates including Si, SiC and Sapphire but not limiting by them.

Microelectronics and optoelectronics epi-technology of III-V compounds with research and development and large-scale production by molecular beam epitaxy (MBE) technology.

MOCVD wafer growth services in R&D and small scale production of compound semiconductor devices (InP / GaAs/ GaSb/ InAs ). device simulation and epitaxial design of lasers, LEDs, detectors, and solar cells.

MOCVD and LPE epiwafers for LED and VCSEL, solid state secondary battery.

GaAs based epiwafers for FP/DFB/VCSEL/PD, InP based epiwafers for FP/DFB/PD/APD

Manufacturer of GaAs-based laser diodes covering 780nm-1340nm, QD and QW epiwafers,

Compound epitaxial wafers

High speed 850 nm vertical cavity surface emitting laser (VCSEL) and p-i-n photodiode epiwafer manufacturer.

Manufacturer of II-IV and III-V epiwafers, foundry and epitaxial services.

Manufacturer of SiC wafers and optoelectronic bare die and packaged components. Foundry services.

MOCVD Epitaxy, wafer and chip process, laser-diode package and testing vertically integrated

Epiwafer foundry. Manufacturer of epiwafers for HBT, HEMT, pHEMT, BiHEMT, GaN. Optoelectronic epiwafers for PD, APD, FP-LD, VCSEL, DFB laser diodes. Solar cell epiwafers.

Producer of Indium Phosphide substrates covering all dopants (Fe, Sn, Zn, S) and all diameters (2", 3", 4").

Manufacturer of silicon wafers, compound semiconductor wafers, LED chips and epiwafers. Photoresists.