We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.
GAAS BASED PRODUCTS
AlGaAs/GaAs
QW edge emitting lasers
VCSELs
FETs, HEMTs, Schottky diodes
varactors
GaAsP/GaAs
strained QW edge emitting lasers
InGaAsP/GaAs
QW lasers 808nm
InGaAs/AlGaAs/GaAs
strained QW lasers
InAs/GaAs
QD lasers
AlGaAs/GaAs
passive waveguides
Manufactured to specification
INP BASED PRODUCTS
InGaAsP/InP
strained or matched QW edge emitting
lasers and SOAs 1300 - 1600nm
InGaAs/InP
QW edge emitting lasers
InGaAsP/InP
VCSEL structures
InAlGaAs/InP
edge emitting and VCSEL structures
InGaAsP/InP
passive devices
InGaAs
photodetectors
InAlAs/InGaAs/InP
HEMTs
Manufactured to specification
VCSEL Epi-Structure
VCSEL is a semiconductor laser diode comprised of epitaxial layers grown on n-type GaAs or InP substrates by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). The VCSEL structure consists of Fabry-Perot cavity (resonator) including an active region with several quantum wells, where light is generated, and top and bottom DBRs (Distributed Bragg Reflector). DBR is composed of stack of semiconductor layers (each with a thickness of a quarter of the laser wavelength) that reflect a particular range of light wavelengths. The emitted light leaves the device in a direction perpendicular to its surface.
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World class R&D expertise
We offer extensive research and development services. Whether you are at the concept stage of your product design, need innovative upgrades to your existing products or seek out-of-the-box solutions our R&D capabilities can help you seize new opportunities, bring your operation to the highest level of performance and add value to your investment. We also provide our clients with technological support in carrying out R&D projects and propose new methods and approaches for producing highly successful epitaxial structures.
InGaAs Wafers
The so-called InGaAs material refers to a complete epitaxial stack composed of a variety of layers, with InGaAs forming the key part – the absorption – and being responsible for the material’s optical properties. The InGaAs layer itself is a III-V semiconductor that belongs to the family of In(x)Ga(1-x)As(y)P(1-y). For binary GaAs, InP, GaP, or InAs, the x and y are set to 0 or 1. In quaternary InGaAsP and ternary InGaAs a variety of x and y values are possible, and each combination will tune the semiconductor to different applications.
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