SixPoint Materials, Inc. was founded on September 29th, 2006, as a spin-off from the Nitrides' group in the materials department at the University of California, Santa Barbara (UCSB). The company's core technology is the ammonothermal growth of bulk GaN crystal, which was developed at UCSB under Nakamura Inhomogeneous Crystal Project in the Exploratory Research for Advanced Technology (ERATO) Program led by Professor Nakamura, the pioneer of GaN-based LEDs and laser diodes. Ammonothermal technology will provide higher quality, lower cost GaN wafers than the conventional GaN wafers produced by hydride vapor phase epitaxy (HVPE). This revolutionary technology will realize high performance, low-cost GaN-on-GaN devices including high-power devices, RF devices, ultra-high bringhtness LEDs and ultra-high power blue/green laser diodes for industrial use.