940nm High Power VCSEL Epi wafer
(Conventional Technology)
Low threshold current
Low beam divergence
High power conversion efficiency
High reliability
Suitable for the fabrication of both single emitter and multiple emitter array
02
850nm VCSEL Epi wafer
Low threshold current
Low beam divergence
High reliability
High speed of >10GHz for single emitter chip
Suitable for the fabrication of both single emitter and multiple emitter array
03
940nm High Power VCSEL Epi wafer
(Proprietary Technology)
High oxidation process yield on wafer and batch-to-batch
High throughput oxidation process-batch process capability for oxidation
Very high reliability
Suitable for the fabrication of both single emitter and multiple emitter array
Best candidate for the high power single emitter VCSEL
04
Possible to supply custom designed AlGaAs and InGaAlP based epi wafers.
* All products are grown by state of the art MOCVDs.
