BATOP GmbH is a privately held company founded in 2003, focused on growth of semiconductor nonlinear optical devices like saturable absorbers for lasers, saturable noise suppressor for improvement of optical signals, and photoconductive antennas for Terahertz generation and detection.

We grow thin film stacks of the materials GaAs/AlAs/InAs on GaAs wafers for optoelectronic devices, do wafer processing, device packaging and testing.

On the base of our optoelectronic devices we provide also complete systems like Terahertz spectrometers and picosecond microchip lasers.

We have a high percentage of research and development to improve our products continuously. Therefore we work together with our customers to best fit their needs.

BATOP has grown under the roof of the Technology and Innovation Park Jena. Since March 2017 BATOP operates in its own building with more space for production and development.

Growth of semiconductor optoelectronic and electronic devices

We grow for you high quality epitaxial thin film stacks using the materials AlAs, GaAs, InAs, AlGaAs, AlInAs and InGaAs for different applications on GaAs wafers. The available wafer sizes are 2" (50.8 mm) or 4" (100 mm) diameter with a maximum film stack thickness up to 5 µm.

For some applications fast time response devices are needed, such as optical detectors, saturable absorbers or photoconductive antennas.
We offer low temperature epitaxial growth of devices with short response time ~ 1 ps.

> Energy band gap> GaAs | AlxGa1-xAs | InxGa1-xAs
> Refractive index > GaAs | AlAs | AlxGa1-xAs | InxGa1-xAs
> Devices > Bragg mirror | SAM | RSAM | SA | SANOS | SOC | Microchip laser | PCA
> Device application > Papers | Patents | FAQs

Device physics
Spectral reflectance of AlAs/GaAs Bragg mirrors
How does a saturable absorber mirror (SAM) work?
Saturable absorber (SA) in transmission
Resonant saturable absorber mirror (RSAM)
Saturable noise suppressor (SANOS)
Saturable output coupler (SOC)
Microchip laser
Photoconductive Antenna (PCA) for THz Applications