Lanthanum Aluminate (LaAlO3) is a crystalline material that can be used as a substrate in various applications, particularly in the field of electronics. It has a perovskite crystal structure and is known for its high dielectric constant and thermal stability. LaAlO3 substrates are often used in the growth of thin films for high-k dielectrics, piezoelectric materials, and ferroelectric devices.
Due to its high thermal stability, LaAlO3 is also suitable for high-temperature processing and can be used in high-temperature electronics applications. Its compatibility with a wide range of materials, such as metal oxides, makes it a versatile substrate for various applications, including high-k metal-insulator-metal capacitors, high-temperature piezoelectric devices, and high-temperature resonators.
Lanthanum Aluminate substrates are typically grown by the floating zone method, although other growth methods, such as pulsed laser deposition, can also be used. The main challenge in growing LaAlO3 substrates is to obtain high-quality, large-area single-crystal films, which are essential for many device applications. Nevertheless, LaAlO3 has gained increasing attention in recent years as a promising substrate material for various applications in the fields of electronics and photonics.