On March 14, the German chip manufacturer Infineon filed a patent lawsuit against China's Innoscience in a U.S. court over its semiconductor technology. Infineon stated that it is seeking injunctive relief for the infringement of a U.S. patent related to gallium nitride (GaN) technology, which is crucial for its GaN power semiconductors.
The patent claims at issue pertain to fundamental aspects of GaN power semiconductors, incorporating advancements that enhance the reliability and performance of Infineon's proprietary GaN devices. The legal action was initiated in the district court of the Central District of California.
In response, Innoscience refutes Infineon's allegations of patent infringement and challenges the validity of Infineon's patent. Innoscience affirms its determination to vigorously defend itself and expresses confidence in its ability to prevail.
Additionally, Innoscience questions Infineon's motives in pursuing the litigation, highlighting what it perceives as significant deficiencies in the patent asserted by Infineon. The company asserts that a preliminary examination of Infineon's patent portfolio indicates that the purported "invention" was previously disclosed in its own earlier patents, raising concerns about potential non-disclosure during the patent prosecution process.
Innoscience contends that Infineon's characterization of the claims of the asserted patent as "covering core aspects of GaN power semiconductors" is inaccurate. According to Innoscience, the lawsuit only pertains to a small portion of its packaged high-voltage (650V–700V) GaN transistors and does not impact the majority of its other products. As a result, Innoscience believes that the lawsuit should have minimal or no impact on its current ability to manufacture, use, sell, offer to sell, or import its products into the United States for its customers.
