During the 2024 SPIE Advanced Lithography + Patterning conference, key figures from Intel and Samsung shared their insights on the future directions for lithography, patterning, and the broader scope of semiconductor production. Emphasizing lessons drawn from history, both delegates underscored the significance of past trends in shaping future expectations.
Historically, the evolution of semiconductor technology has witnessed a consistent increase in transistor counts on chips, enhancing both functionality and performance. Today, an advanced semiconductor device boasts over 100 million transistors. Intel's Anne Kelleher, during her address, forecasted a monumental leap to a trillion transistors on a single chip by 2030, a continuation of the exponential growth seen since 1970.
Kelleher elucidated on the shifts in technological advancements necessary to sustain this growth. Initially focusing on geometric scaling to reduce transistor size through advanced lithography and patterning, the industry has since migrated to design-technology co-optimization (DTCO) to improve the layout of cells on chips. Looking ahead, Kelleher envisions a move towards system technology co-optimization, utilizing high NA EUV lithography for continued silicon scaling. She highlighted Intel's pioneering efforts in installing the first high NA EUV tool globally, with plans to demonstrate its manufacturing readiness by 2025.
Kelleher also discussed layout improvements and the potential of heterogeneous integrated circuits for substantially reducing power consumption. These advancements hinge on progress in packaging technologies that blur the boundaries between chip fabrication and packaging.
Chan Hwang of Samsung, giving a parallel presentation, revisited the evolution of advanced lithography over the past two decades, particularly emphasizing the transition from deep ultraviolet (DUV) to extreme ultraviolet (EUV) lithography. Hwang anticipates a similar development trajectory for EUV, focusing on enhancing pattern uniformity and accuracy, despite the unique challenges posed by EUV's stochastic effects.
Both presentations highlighted that advancements in lithography and patterning demand a broader, more innovative approach across various aspects of semiconductor manufacturing. The journey ahead for lithographers and pattern specialists is ripe with opportunities for breakthroughs that will shape the future of the semiconductor industry.
