The surge in demand for silicon carbide (SiC) crystals is being driven by the exponential rate of electric vehicle (EV) adoption and the increasing need for SiC in power electronics components for advanced electronic devices. The market for SiC MOSFETs is thriving due to their benefits, including high switching frequency, thermal resistance, and large breakdown voltage, which enhance efficiency, extend vehicle range, and reduce system costs for powertrains. As a result, the SiC device market is projected to experience significant growth, with a substantial portion of the demand expected to come from the EV sector.
To address the increasing demand for SiC crystals, manufacturers are faced with the challenge of rapidly expanding production. This process involves time-consuming production methods, specialized growing systems, and the need to protect proprietary crystal growing techniques as intellectual property. Leading providers of crystal-growing systems now offer specialized and customizable solutions to meet the industry's specific process and intellectual property needs, enabling scalable production according to market demands.
Manufacturers aiming to achieve optimal growth of SiC crystals dedicate considerable resources to research and development, focusing on proprietary details and optimizations to maintain a competitive advantage. PVA Crystal Growing Systems GmbH, a subsidiary of PVA TePla Group, develops and constructs machinery for several industrial methods of producing ultra-pure monocrystals, including Physical Vapor Transport, Cz (Czochralski), FZ (Float Zone), and VGF (Vertical Gradient Freeze).
As volume requirements increase, manufacturers are advised to install compact crystal growing systems with exceptional reliability and energy efficiency. PVA's fourth-generation crystal growing system, SiCma, has been designed to produce monocrystal boules of SiC in diameters ranging from 4 to 8 inches, with features such as high automation, compact footprint, and energy-efficient inductive heating. Timely delivery of equipment is crucial for manufacturers scaling up their capacity rapidly.
The industry is also preparing for the transition to larger wafer sizes, as larger boules will be required to meet the upcoming demand. Manufacturers can benefit from modular crystal growing systems, such as SiCma, which allow for flexibility in response to evolving market demands by accommodating the growth of both 6-inch and 8-inch SiC boules simply by adjusting the chamber size.
There is a notable increase in market demand for aluminum nitride (AlN) wafers, driven by its exceptional thermal conductivity and electrical insulation properties, which are crucial for electronic devices and EVs. Manufacturers who partner with reputable OEMs capable of customizing crystal growing systems and prioritizing intellectual property protection will gain a competitive advantage in this rapidly expanding market.
The demand for SiC and AlN is expected to continue to grow significantly, and manufacturers must invest in specialized crystal growing systems to meet this demand and maintain their competitiveness in the market.
