Samsung Electronics is gearing up to unveil a range of innovative memory technologies at the 2024 IEEE-SSCC, as reported by VideoCardz. Among these advancements, Samsung is set to introduce a new 280-layer 3D QLC NAND flash memory with a 1 Tb density, poised to empower the next generation of mainstream SSDs and smartphone storage. This breakthrough chip boasts an areal density of 28.5 Gb/mm² and impressive speeds of 3.2 GB/s. By comparison, current top-tier NVMe SSDs rely on 2.4 GB/s I/O data rates from the fastest 3D NAND flash types.
Additionally, Samsung's latest generation DDR5 memory chip offers data rates of DDR5-8000 with a density of 32 Gbit (4 GB). Leveraging a symmetric-mosaic DRAM cell architecture, this chip is fabricated on a 5th generation 10 nm class foundry node optimized for DRAM products. Notably, this chip will enable PC memory vendors to manufacture single-rank configuration 32 GB and 48 GB DIMMs with DDR5-8000 speeds, as well as dual-rank configuration 64 GB and 96 GB DIMMs (subject to platform compatibility with DDR5-8000 in dual-rank).
