EMCORE’s world-class Indium Phosphide (InP) semiconductor wafer fabrication facility supports our vertically-integrated chip level devices manufacturing for our laser, transmitter and receiver products, as well as 2.5 Gbps to 25 Gbps Telecom and Datacom devices.
With class 1,000 clean room space, it features 2” and 3” wafer processes for InP-based devices including Lasers, APD & PIN Photodetectors, High Power Gain Chips and MZ Modulators. Our strong, highly-experienced technical team has expertise in device design, characterization, epitaxial growth, wafer processing, reliability and COB/TO/OSA sub-assembly for both development and manufacturing.
PRODUCTS
G1033-038, 1610 nm GPON DFB Laser Chip
G1013-409, 10G Avalanche Photodiode (APD) Die
G1013-304 and G1013-305, 10G PIN Photodiode
G1013-406, 2.5G Avalanche Photodiode (APD) Bare Die
G3072-408, 10G Coplanar Bottom Illuminated APD
G1033-024, 1310 nm GPON DFB Laser Chip
G1033-032, 1490 nm GPON Laser Diode Chip
