Pure Gas
| Items | Purity | Package | Charge Amount | Applied Processes | |
|---|---|---|---|---|---|
| Cylinder | Valve | ||||
| NO | 3N5, 4N (99.95%, 99.99%) | 47L | JISS22R | 490psi, 290psi | Deposition |
| CF₄ | 5N (99.999%) | 47L, 440L | DISS716, JISS22R | 30kg, 32kg, 300kg | Cleaning and Etching |
| HBr | 5N, 5N5 (99.999%, 99.9995%) | 47L | CGA330, DISS634 | 50kg, 55kg | Etching |
| Si₂H₆ | 4N8 (99.998%) | 47L | JISS22L, DISS632 | 5kg, 10kg, 20kg | Deposition |
| C3F8 | 5N (99.999%) | 47L | JISS22R | 40kg | Cleaning and Etching |
| He | 5N, 6N (99.999%, 99.9999%) | 47L, Bundle | CGA 580, JISS22R | 130Bar, 170Bar | Carrier and Purge |
Mix Gas
| Items | Purity | Package | Charge Amount | Applied Processes | |
|---|---|---|---|---|---|
| Cylinder | Valve | ||||
| Excimer Laser | 1.25% Kr 3.5%Ar/10ppmXe | 47L | JISS22R, CGA580, CGA679 | 135kg/cm2 | Photo Lithography |
| 1% F₂ / 1.25% Kr 1% F₂ / 3.5% Ar | 135kg/cm2 | Photo Lithography | |||
| PH₃ Mix | 20ppm ~ 50% PH₃ Mixture | 47L | CGA350 | 100 ~ 120kg/cm2 | Doping |
| Inert Mix | 3% H₂ & 1.2% He Mixture | 47L | DISS724, JISS22R | 110 ~ 120kg/cm2 | Photo Lithography and others |
| SiH₄ Mix | 10ppm ~ 50% SiH₄ Mixture | 47L | JISS22L, CGA350 | 100 ~ 120kg/cm2 | LED Deposition |
| Si₂H₆ Mix | 100ppm ~ 50% Si₂H₆ Mixture | 47L | CGA350 | 120kg/cm2 | LED Deposition |
| F₂ Mix | 1% ~ 20% F₂ Mixture | 47L | CGA679 | 110 ~ 120kg/cm2 | Cleaning |
| AsH₃ Mix | 15% AsH₃ Mixture | - | CGA350 | 400psi | Doping |
| GeH4 Mix | 10% GeH4 Mixture | 47L | DISS632 | 1800psi | Deposition |
