Epiel is a specialized manufacturer of Silicon Epitaxial Wafers and provider of Epitaxial Services for semiconductor industry.
Epiel offers a diverse product selection of tailor-made silicon epitaxial wafers in a wide range of specifications from 3” to 8” size for some of the most essential microelectronics applications: power discretes, ICs, sensors, etc.
Silicon Epitaxial Wafers are the core material used in manufacturing of a wide range of semiconductor devices with applications in consumer, industrial, military and space electronics.
Epiel provides a variety of production proven and industry standard Silicon Epitaxy process technologies for some of the most essential microelectronics applications:
- Schottky diodes
- Ultra-fast diodes
- Zener diodes
- PIN diodes
- Transient Voltage Suppressors (TVS)
- and other
- Power IGBT
- Power DMOS
- Medium power
- and other
- Bipolar ICs
- and other
To Integrated Circuit manufacturers Epiel offers Silicon Epitaxial Deposition Services on substrates with burried ion-implanted or diffused layers.
Silicon substrates are either purchased from major global vendors or supplied by customer.
Silicon on Sapphire (SOS) Epitaxial Wafers
Epiel provides Silicon Epitaxy on ultrapure R-plane sapphire substrates. Silicon on sapphire epiwafers are mainly used as substrates for manufacturing electronic devices used in sensors, telecommunications, optoelectronics and other applications.
Common applications include:
Lattice mismatch is the largest problem in silicon on sapphire growth causing structural defects in the transition from substrate to layer. Epiel's proprietary technology for epitaxial deposition of silicon on sapphire substrates enables the growth of low-defect ultra-thin monocrystalline doped layers suitable for integrated circuit manufacturing.
Tipical layer thickness is less than 1 micron. Silicon on sapphire epiwafers are available in 76, 100 and 150 mm sizes. 200 mm is available at special request.
Epiel boasts a highly experienced Silicon Epitaxy specialist team and flexible technology capabilities that enable us to develop customized processes and supply customer-specific epitaxial wafers with non-standard parameters.
Customized features include:
Ultra-high resistivity (Intrinsic) epitaxial layers (above 1000 Ohm.cm)
Application: PIN-diodes, Radiation sensors
Ultra-thick epitaxial layers
Application: High power discrete devices, etc.
Multiple epitaxial layers
Application: Special discrete devices
Variable doping profile of epitaxial layer
Application: DMOS and Power transistors
Customers involved in development of new silicon devices can benefit from Epiel extensive epitaxial know-how and availability of small-lot shipments.