GaN-on-GaN technology is the perfect solution for applications requiring high current density and reliability. In lighting applications, the lower defect density in the epitaxial LED-on-GaN reduces droop, allows higher brightness and efficacy at very high current density, and provides more lumen/mm2 . Free standing GaN wafers are available in 2-inch diameter single side polished with two levels of crystal quality. GaN quality is identical both 2-inch and 100mm freestanding GaN to facilitate scale-up & industrialization. Saint-Gobain Lumilog combines decades of expertise in the field of crystal growth and finishing to manufacture consistent high quality GaN substrates and design substrates that meet both application and epi process requirements.
