Chemical Mechanical Polishing Liquid
Chemical mechanical polishing is a key process to achieve global uniform planarization of wafers in the manufacturing process of integrated circuit chips. Chemical mechanical polishing liquid is the main chemical material used in the chemical mechanical polishing process. The company's chemical mechanical polishing solution has achieved large-scale sales in the 130-14nm technology node, mainly used in domestic 8-inch and 12-inch mainstream wafer production lines; 10-7nm technology node products are being developed. According to different polishing objects, the company's chemical mechanical polishing liquid includes copper and copper barrier series, tungsten polishing liquid, silicon polishing liquid, oxide polishing liquid and other products.
photoresist remover
According to different downstream application fields of photoresist, the company's photoresist remover includes a series of products for integrated circuit manufacturing, wafer level packaging, LED/OLED and other products. Chemicals that remove photoresist residues from semiconductor wafers by dipping or rinsing the semiconductor wafers in a cleaning solution.
photoresist remover
According to different downstream application fields of photoresist, the company's photoresist remover includes a series of products for integrated circuit manufacturing, wafer level packaging, LED/OLED and other products. Chemicals that remove photoresist residues from semiconductor wafers by dipping or rinsing the semiconductor wafers in a cleaning solution.
Product Center_03.jpg Photoresist Removers for Integrated Circuit Manufacturing
1. Semi-aqueous photoresist remover: ICS8000 photoresist remover provides excellent etching residue removal capability, low defect, low cost solution, suitable for copper process Damascus process. Single chip cleaning process, water rinsing. IDEAL Clean series photoresist removers improve excellent etching residue removal capability, low cost, safety and environmental protection, and are suitable for the back-end process of aluminum process. Batch and single-wafer cleaning process, water rinse.
2. Amine photoresist remover: ICS6000 series photoresist remover provides excellent organic and inorganic etching residue removal ability, suitable for the back-end process of aluminum process. Batch process, IPA or NMP intermediate rinse.
Product Center_03.jpg Photoresist Removers for Wafer Level Packaging
The BPC1000 series of photoresist removers provide thick film positive and negative photoresist photoresist removal and low-cost solutions for wafer level packaging CIS TSV, gold bump, solder bump and stud bump processes. Batch processing and single-chip cleaning processes.
Product Center_03.jpg Photoresist remover for LED/OLED
1. BPC3000 series photoresist remover provides excellent photoresist removal capability and low-cost high-performance solution for LED chip manufacturing, suitable for MESA, ITO, CBL, Metal lift-off, Passivation and flip chip process, batch process.
2. TPS2000 series photoresist remover provides excellent AMOLED manufacturing photoresist removal ability, suitable for TFT-LCD and OLED process photoresist removal. batch process.
chemical mechanical polishing fluid
Chemical mechanical polishing is a key process to achieve uniform global planarization of wafers in the manufacturing process of integrated circuit chips, and chemical mechanical polishing liquid is the main chemical material used in the chemical mechanical polishing process. The company's chemical mechanical polishing solution has achieved large-scale sales in the 130-14nm technology node, mainly used in domestic 8-inch and 12-inch mainstream wafer production lines; 10-7nm technology node products are being developed. According to different polishing objects, the company's chemical mechanical polishing liquid includes copper and copper barrier series, tungsten polishing liquid, silicon polishing liquid, oxide polishing liquid and other products.
Copper chemical mechanical polishing solution
For copper removal and planarization in integrated circuit copper interconnect processes. It has the characteristics of high copper removal rate, adjustable dish-shaped depression, low defect and so on. Products have been mass-produced on 130-14nm technology nodes for logic chips and 3D NAND and DRAM chips.
Chemical Mechanical Polishing Fluid for Barrier Layers
It is used for the removal and planarization of the barrier layer in the copper interconnection process of the integrated circuit. The product has excellent resistance to copper corrosion, adjustable dielectric materials including low dielectric material and ultra-low dielectric material removal rate capability, flat wafer surface after polishing, less defects. Products have been mass-produced on 130-14nm technology nodes for logic chips and 3D NAND and DRAM chips.
Tungsten Chemical Mechanical Polishing Solution
For the planarization of tungsten plugs and tungsten vias in integrated circuit manufacturing processes. A variety of tungsten chemical-mechanical polishing solutions have been developed and successfully mass-produced, including tungsten body polishing solutions with high selectivity ratios, tungsten body polishing solutions with low selectivity ratios, and tungsten repair polishing solutions. With adjustable tungsten removal rate and tungsten to dielectric material selection ratio. Products are used in mass production on logic chips, 3D NAND and DRAM chips.
Dielectric layer chemical mechanical polishing liquid
Used for removal and planarization of inter-layer dielectric (ILD) and inter-metal dielectric (IMD) in integrated circuit manufacturing processes. Products include alkaline and acidic dielectric layer polishing fluids. It has the advantages of high removal rate, high planarization efficiency, low defect and low cost.
Silicon Chemical Mechanical Polishing Fluid
It is used for polishing of single crystal silicon/polysilicon, which can be used for silicon wafer recycling, memory process and backside illuminated sensor (BSI) process, etc. Products include three series. Among them, the high selectivity silicon rough polishing series products have high dilution ratio, high silicon removal rate, and high silicon to oxide/nitride selectivity ratio. Silica polishing liquid series has the advantage of low defect. The BSI series of polishing slurries have ideal silicon and silicon dioxide removal rates and selectivity ratios.
Product Center_03.jpg Shallow groove isolation chemical mechanical polishing solution
Polishing for shallow trench isolation in integrated circuit manufacturing processes. The use of cerium oxide abrasive particles has the advantages of high selectivity ratio, high planarization efficiency, and low defect rate.
Chemical Mechanical Polishing Fluid for 3D Encapsulation of TSV
A family of high removal rate chemical mechanical polishing slurries for TSV processes. Anji has successfully mass-produced a variety of polishing solutions for TSV process. The product platform covers TSV copper/barrier layer polishing solution, TSV crystal-back copper/dielectric layer polishing solution, TSV crystal-back silicon polishing solution, TSV crystal-back silicon/copper polishing solution Polishing fluid, etc. The product has the advantages of high removal rate and adjustable selection ratio.
Cleaning after chemical mechanical polishing of copper process
Effectively remove abrasive particles and chemical residues on the surface after copper polishing, prevent copper surface corrosion and reduce surface defects. The product can be used for cleaning after polishing in the copper process of 130-28nm.
